Datasheet Details
| Part number | MJE15034 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.79 KB |
| Description | NPN Transistor |
| Datasheet | MJE15034-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor MJE15034.
| Part number | MJE15034 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.79 KB |
| Description | NPN Transistor |
| Datasheet | MJE15034-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage : V(BR)CEO=350V ·Good Linearity of hFE ·Complement to Type MJE15035 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM -Peack PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC=10mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A;
IB= 0.1A VBE(on) Base-Emitter On Voltage IC=1A ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
MJE15034 | Complementary Silicon Plastic Power Transistors | ON Semiconductor |
|
MJE15034G | Complementary Silicon Plastic Power Transistors | ON Semiconductor |
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