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MJE15034 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage : V(BR)CEO=350V Good Linearity of hFE Complement to Type MJE15035 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Driver stage amplifier applications ABSOLU

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isc Silicon NPN Power Transistor MJE15034 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO=350V ·Good Linearity of hFE ·Complement to Type MJE15035 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM -Peack PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.