| Part Number | MJE15034 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Breakdown Voltage : V(BR)CEO=350V ·Good Linearity of hFE ·Complement to Type MJE15035 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION. = 0.1A VBE(on) Base-Emitter On Voltage IC=1A ; VCE= 5V ICBO Collector Cutoff Current VCB= 350V ; IE= 0 IEBO Emitter Cutoff Current VEB=5V; IC= 0 hFE1 DC Current Gain IC=0.1A ; VCE=5V hFE2 DC Current Gain IC=0.5A ; VCE=5V hFE3 DC Current Gain IC=1.0A ; VCE=5V hFE4 DC Current Gain . |
MJE15034 Datasheet and Specifications PDF
The MJE15034 is a NPN Transistor.
| Part Number | MJE15034 Datasheet |
|---|---|
| Description | Complementary Silicon Plastic Power Transistors |
| Manufacturer | onsemi |
| Overview |
Complementary Silicon Plastic Power Transistors
TO−220, NPN & PNP Devices
MJE15034 (NPN), MJE15035 (PNP)
Complementary silicon plastic power transistors are designed for use as high−frequency drivers.
* High Current Gain * Bandwidth Product * TO *220 Compact Package * Epoxy meets UL 94 V *0 @ 0.125 in * These Devices are Pb *Free and are RoHS Compliant* MAXIMUM RATINGS Rating Collector *Emitter Voltage Collector *Base Voltage Emitter *Base Voltage Collector Current * Continuous Collector Current * Pe. |