Continental Device India MJE15032
SILICON EPITAXIAL POWER TRANSISTORS
| Part No. | MJE15032 |
|---|---|
| Datasheet | MJE15032 Download |
| Manufacturer |  Continental Device India |
| Description | SILICON EPITAXIAL POWER TRANSISTORS |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL VALUE Collector- Base Voltage Collector- Emitter Voltage Emitter- Base Voltage Collector Current Continuous Peak Base Current Power Dissipation TC=25ºC Derate Above 25ºC Power Dissipation TA=25ºC Derate Above 25ºC Operating & Storage Junction Temperature Range VCBO VCEO VEBO IC IB PD PD Tj, Tstg 250 250 5 8 16 2 50 0.4 2 0.016 - 65 to +150 Thermal Resistance Thermal Ambient Junction to Case Rth (j-a) Rth (j-c) 62.5 2.5ELECTRICAL CHARACTERISTICS
(Tc=25º C unless specified otherwise)DESCRIPTION
SYMBOL TEST CONDITION MIN TYP Collector- Emitter Sustaing Voltage Collector Cut Off Current Emitter Cut Off Current DC Current Gain BCaoslleecEtomritEtemriottnerVSogfedcalttaugraetion Voltage VCEO(sus)* IC=10mA,
