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MJE15032 - SILICON EPITAXIAL POWER TRANSISTORS

General Description

SYMBOL VALUE Collector- Base Voltage Collector- Emitter Voltage Emitter- Base Voltage Collector Current Continuous Peak Base Current Power Dissipation TC=25ºC Derate Above 25ºC Power Dissipation TA=25ºC Derate Above 25ºC Operating & Storage Junction Temperature Range VCBO VCEO VEBO IC IB PD PD T

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Datasheet Details

Part number MJE15032
Manufacturer CDIL
File Size 82.42 KB
Description SILICON EPITAXIAL POWER TRANSISTORS
Datasheet download datasheet MJE15032 Datasheet

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Full PDF Text Transcription (Reference)

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON EPITAXIAL POWER TRANSISTORS MJE15032 NPN MJE15033 PNP TO - 220 Plastic Package High - Frequency Drivers in Audio Amplifier ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE Collector- Base Voltage Collector- Emitter Voltage Emitter- Base Voltage Collector Current Continuous Peak Base Current Power Dissipation TC=25ºC Derate Above 25ºC Power Dissipation TA=25ºC Derate Above 25ºC Operating & Storage Junction Temperature Range VCBO VCEO VEBO IC IB PD PD Tj, Tstg 250 250 5 8 16 2 50 0.4 2 0.016 - 65 to +150 Thermal Resistance Thermal Ambient Junction to Case Rth (j-a) Rth (j-c) 62.5 2.