Datasheet Details
| Part number | MJE171 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.55 KB |
| Description | PNP Transistor |
| Download | MJE171 Download (PDF) |
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| Part number | MJE171 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.55 KB |
| Description | PNP Transistor |
| Download | MJE171 Download (PDF) |
|
|
|
·Collector–Emitter Sustaining Voltage— : VCEO(SUS) = -60V ·DC Current Gain— : hFE = 30(Min) @ IC= -0.5 A = 12(Min) @ IC= -1.5 A ·Complement to the NPN MJE181 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low power audio amplifier applications.
·Low current high speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO L PARAMETER VALUE VCBO Collector-Base Voltage -80 VCEO Collector-Emitter Voltage -60 VEBO Emitter-Base Voltage -7 IC Collector Current-Continuous -3 ICM Collector Current-peak -6 IB Base Current -1 Collector Power Dissipation PC Ta=25℃ Collector Power Dissipation TC=25℃ 1.5 12.5 Ti Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 10 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 83.4 ℃/W isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA;
isc Silicon PNP Power Transistor MJE171.
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MJE171 | PNP Transistor | SeCoS |
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