Datasheet4U Logo Datasheet4U.com
Inchange Semiconductor logo

MJE18004G Datasheet

Manufacturer: Inchange Semiconductor
MJE18004G datasheet preview

Datasheet Details

Part number MJE18004G
Datasheet MJE18004G-INCHANGE.pdf
File Size 197.53 KB
Manufacturer Inchange Semiconductor
Description NPN Transistor
MJE18004G page 2 MJE18004G page 3

MJE18004G Overview

·Collector-Base Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor MJE18004G Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0.1A 450 V 0.5 0.6 V 0.45 0.8 V 0.75 V 1.1 V VBE(sat)-2 Base-Emitter Saturation Voltage ICES Collector Cutoff Current ICEO Collector Cutoff Current IC= 2A;.

MJE18004 from other manufacturers

See all manufacturers

Brand Logo Part Number Description Other Manufacturers
Motorola Logo MJE18004 POWER TRANSISTOR Motorola
ON Logo MJE18004 Switch-mode NPN Bipolar Power Transistor ON
SavantIC Logo MJE18004 SILICON POWER TRANSISTOR SavantIC
Motorola Logo MJE18004D2 POWER TRANSISTORS Motorola
Inchange Semiconductor logo - Manufacturer

More Datasheets from Inchange Semiconductor

See all Inchange Semiconductor datasheets

Part Number Description
MJE18004 NPN Transistor
MJE18002 NPN Transistor
MJE18006 NPN Transistor
MJE18008 NPN Transistor
MJE180 NPN Transistor
MJE181 NPN Transistor
MJE182 NPN Transistor
MJE1100 NPN Transistor
MJE13005D TO-252 NPN Transistor
MJE13009F NPN Transistor

MJE18004G Distributor

Datasheet4U Logo
Since 2006. D4U Semicon. About Datasheet4U Contact Us Privacy Policy Purchase of parts