Part MJE18004D2
Description POWER TRANSISTORS
Category Transistor
Manufacturer Motorola Semiconductor
Size 466.58 KB
Motorola Semiconductor
MJE18004D2

Overview

  • Low Base Drive Requirement
  • High Peak DC Current Gain (55 Typical) @ IC = 100 mA
  • Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread
  • Integrated Collector-Emitter Free Wheeling Diode
  • Fully Characterized and Guaranteed Dynamic VCE(sat)
  • “6 Sigma” Process Providing Tight and Reproductible Parameter Spreads It’s characteristics make it also suitable for PFC application.