Datasheet4U Logo Datasheet4U.com

MJE18004D2 - POWER TRANSISTORS

Key Features

  • Low Base Drive Requirement.
  • High Peak DC Current Gain (55 Typical) @ IC = 100 mA.
  • Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread.
  • Integrated Collector.
  • Emitter Free Wheeling Diode.
  • Fully Characterized and Guaranteed Dynamic VCE(sat).
  • “6 Sigma” Process Providing Tight and Reproductible Parameter Spreads It’s characteristics make it also suitable for PFC.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MJE18004 NPN Transistor INCHANGE
MJE18004 Switch-mode NPN Bipolar Power Transistor ON
MJE18004 SILICON POWER TRANSISTOR SavantIC
MJE18004G NPN Transistor INCHANGE
MJE18002 NPN Transistor INCHANGE

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MJE18004 POWER TRANSISTOR
MJE18002 POWER TRANSISTOR
MJE18002D2 POWER TRANSISTORS
MJE18006 POWER TRANSISTOR
MJE18008 POWER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE18004D2/D MJE18004D2 Designer's ™ Data Sheet High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The MJE18004D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window.