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MJE18004G Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor MJE18004G.

General Description

·Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) ·High Switching Speed ·G:Pb-Free Package ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in 220V line-operated switch mode power supplies and electronic light ballasts ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current 2 A IBM Base Current-Peak 4 A PD Total Power Dissipation@TC=25℃ 75 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Rresistance,Junction to Case 1.65 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W isc Website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor MJE18004G ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA;

IB=0 VCE(sat)-1 VCE(sat)-2 Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage IC= 1 A ;IB= 0.1A TC=125℃ IC= 2A ;IB= 0.4 A TC=125℃ VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 2.5A ;IB= 0.5 A VBE(sat)-1 Base-Emitter Saturation Voltage IC= 1A;

IB= 0.1A 450 V 0.5 0.6 V 0.45 0.8 V 0.75 V 1.1 V VBE(sat)-2 Base-Emitter Saturation Voltage ICES Collector Cutoff Current ICEO Collector Cutoff Current IC= 2A;

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