MJE18004G Description
·Collector-Base Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor MJE18004G Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0.1A 450 V 0.5 0.6 V 0.45 0.8 V 0.75 V 1.1 V VBE(sat)-2 Base-Emitter Saturation Voltage ICES Collector Cutoff Current ICEO Collector Cutoff Current IC= 2A;.