Collector-Base Breakdown Voltage-
: V(BR)CBO= 1000V(Min)
High Switching Speed
G:Pb-Free Package
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for use in 220V line-operated switch mode powe
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isc Silicon NPN Power Transistor
MJE18004G
DESCRIPTION ·Collector-Base Breakdown Voltage-
: V(BR)CBO= 1000V(Min) ·High Switching Speed ·G:Pb-Free Package ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in 220V line-operated switch mode power
supplies and electronic light ballasts
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1000
V
VCEO Collector-Emitter Voltage
450
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
10
A
IB
Base Current
2
A
IBM
Base Current-Peak
4
A
PD
Total Power Dissipation@TC=25℃
75
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150 ℃
T
MJE18004G Datasheet
