• Part: MJE18002G
  • Description: NPN Bipolar Power Transistor
  • Category: Transistor
  • Manufacturer: onsemi
  • Size: 179.34 KB
Download MJE18002G Datasheet PDF
onsemi
MJE18002G
Features - Improved Efficiency Due to Low Base Drive Requirements: - High and Flat DC Current Gain h FE - Fast Switching - No Coil Required in Base Circuit for Turn- Off (No Current Tail) - Tight Parametric Distributions are Consistent Lot- to- Lot - Standard TO- 220 - These Devices are Pb- Free and are Ro HS pliant- MAXIMUM RATINGS Rating Symbol Value Unit Collector- Emitter Sustaining Voltage Collector- Emitter Breakdown Voltage Emitter- Base Voltage Collector Current - Continuous - Peak (Note 1) Base Current - Continuous - Peak (Note 1) Total Device Dissipation @ TC = 25_C Derate above 25°C VCEO VCES VEBO IC ICM IB IBM PD 2.0 5.0 1.0 2.0 50 0.4 Vdc Vdc Vdc Adc Adc W W/_C Operating and Storage Temperature THERMAL CHARACTERISTICS TJ, Tstg - 65 to 150 _C Characteristics Symbol Max Unit Thermal Resistance, Junction- to-...