MJE18006 Description
·Collector-Base Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor MJE18006 Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage VCE(sat)-1 Collector-Emitter Saturation Voltage VCE(sat)-2 Collector-Emitter Saturation Voltage VBE(sat)-1 Base-Emitter Saturation Voltage CONDITIONS IC= 30mA; IB= 0 IC= 1.5 A ;IB= 0.15A TC=125℃ IC= 3A...