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MJE18006

Manufacturer: Inchange Semiconductor

MJE18006 datasheet PDF by Inchange Semiconductor.

MJE18006 datasheet preview

MJE18006 Datasheet Details

Part number MJE18006
Datasheet MJE18006-INCHANGE.pdf
File Size 212.33 KB
Manufacturer Inchange Semiconductor
Description NPN Transistor
MJE18006 page 2 MJE18006 page 3

MJE18006 Overview

·Collector-Base Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor MJE18006 Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage VCE(sat)-1 Collector-Emitter Saturation Voltage VCE(sat)-2 Collector-Emitter Saturation Voltage VBE(sat)-1 Base-Emitter Saturation Voltage CONDITIONS IC= 30mA; IB= 0 IC= 1.5 A ;IB= 0.15A TC=125℃ IC= 3A...

MJE18006 from other manufacturers

View MJE18006 datasheet index

Brand Logo Part Number Description Other Manufacturers
Motorola Logo MJE18006 POWER TRANSISTOR Motorola
SavantIC Logo MJE18006 SILICON POWER TRANSISTOR SavantIC
Inchange Semiconductor logo - Manufacturer

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