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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJE18002D2/D
MJE18002D2
Advance Information
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network
The MJE18002D2 use a newly developed technology, so called H2BIP*, to design the state of art transistor dedicated to the Electronic Light Ballast and PFC** circuit.
MJE18002D2 Datasheet
