MJE18002D2 datasheet by Motorola Semiconductor (now NXP Semiconductors).
| Part number | MJE18002D2 |
|---|---|
| Datasheet | MJE18002D2_MotorolaInc.pdf |
| File Size | 152.67 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | POWER TRANSISTORS |
|
|
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE18002D2/D MJE18002D2 Advance Information High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The MJE18002D2 use a newly developed technology, so called H2BIP , to design the state of art transistor dedicated to the Electronic Light Ballast and PFC circuit. The main...
View all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MJE18002 | POWER TRANSISTOR |
| MJE18004 | POWER TRANSISTOR |
| MJE18004D2 | POWER TRANSISTORS |
| MJE18006 | POWER TRANSISTOR |
| MJE18008 | POWER TRANSISTOR |
| MJE18009 | POWER TRANSISTORS |
| MJE181 | 3 AMPERE POWER TRANSISTORS |
| MJE182 | 3 AMPERE POWER TRANSISTORS |
| MJE18204 | POWER TRANSISTORS |
| MJE18206 | POWER TRANSISTORS |
