Collector-Base Breakdown Voltage-
: V(BR)CBO= 1000V(Min)
High Switching Speed
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for use in 220V line-operated switchmode power
supplies and electronic light ballasts
ABSOLUTE
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isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Base Breakdown Voltage-
: V(BR)CBO= 1000V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in 220V line-operated switchmode power
supplies and electronic light ballasts
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1000
V
VCEO Collector-Emitter Voltage
450
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current -Continuous
8
A
ICM
Collector Current-Peak
16
A
IB
Base Current
4
A
IBM
Base Current-Peak
8
A
PD
Total Power Dissipation@TC=25℃
125
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
MJE18008 Datasheet
