MJE2801T - NPN Transistor

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) High DC Current Gain- : hFE= 25-100@IC= 3A Complement to Type MJE2901T Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as an output device in complemen

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Datasheet Details

Part number	MJE2801T
Manufacturer	Inchange Semiconductor
File Size	205.38 KB
Description	NPN Transistor
Datasheet	MJE2801T Datasheet

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isc Silicon NPN Power Transistor MJE2801T DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) ·High DC Current Gain- : hFE= 25-100@IC= 3A ·Complement to Type MJE2901T ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as an output device in complementary audio amplifiers up to 35 watts music power per channel.