Datasheet4U Logo Datasheet4U.com

MJE340T - NPN Transistor

General Description

Collector Emitter Sustaining Voltage- : VCEO(SUS) = 300 V(Min) DC Current Gain- : hFE = 100(Min) @ IC= 50mA Low Collector Saturation Voltage- : VCE(sat) = 1.0V(Max.)@ IC= 50mA Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MJE340 Silicon NPN Transistor NTE
MJE340 0.5 AMPERE POWER TRANSISTOR Motorola
MJE340 COMPLEMETARY SILICON POWER TRANSISTORS ST Microelectronics
MJE340 NPN Epitaxial Silicon Transistor Fairchild
MJE340 Medium Power NPN Transistors Multicomp

Other Datasheets by Inchange Semiconductor

Part Number Description
MJE341 NPN Transistor
MJE3055 NPN Transistor
MJE3055T NPN Transistor
MJE371 PNP Transistor
MJE1100 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor MJE340T DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 300 V(Min) ·DC Current Gain- : hFE = 100(Min) @ IC= 50mA ·Low Collector Saturation Voltage- : VCE(sat) = 1.0V(Max.)@ IC= 50mA ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 0.