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MJE4343 - Silicon NPN Power Transistor

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 160V(Min) DC current gain - : hFE = 15 (Min) @IC= 8 A : hFE = 8 (Min) @IC= 16A Complement to Type MJE4353 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For use in high power

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Datasheet Details

Part number MJE4343
Manufacturer INCHANGE
File Size 241.72 KB
Description Silicon NPN Power Transistor
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isc Silicon NPN Power Transistor MJE4343 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 160V(Min) ·DC current gain - : hFE = 15 (Min) @IC= 8 A : hFE = 8 (Min) @IC= 16A ·Complement to Type MJE4353 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For use in high power audio amplifier and switching regulator circuits ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 16 A IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 5 A 125 W -65~150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth
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