Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 160V(Min)
DC current gain -
: hFE = 15 (Min) @IC= 8 A : hFE = 8 (Min) @IC= 16A
Complement to Type MJE4353
Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
For use in high power
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isc Silicon NPN Power Transistor
MJE4343
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 160V(Min) ·DC current gain -
: hFE = 15 (Min) @IC= 8 A : hFE = 8 (Min) @IC= 16A ·Complement to Type MJE4353 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS ·For use in high power audio amplifier and
switching regulator circuits
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
160
V
VCEO Collector-Emitter Voltage
160
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current -Continuous
16
A
IB
Base Current
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
5
A
125
W
-65~150 ℃
Tstg
Storage Temperature
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth
MJE4343 Datasheet
