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MJE4343 - Silicon NPN Transistor

General Description

The MJE4343 (NPN) and MJE4353 (PNP) are silicon complementary transistors in a TO

3PN type package designed for use in high power audio amplifier applications and high voltage switching regulator circuits.

Key Features

  • D High Collector.
  • Emitter Sustaining Voltage: VCEO(sus) = 160V D High DC Current Gain: hFE = 35 Typ @ IC = 8A D Low Collector.
  • Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 8A Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . 160V Collector.
  • Base Voltage, VCB.

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Datasheet Details

Part number MJE4343
Manufacturer NTE Electronics (defunct)
File Size 61.00 KB
Description Silicon NPN Transistor
Datasheet download datasheet MJE4343 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MJE4343 (NPN) & MJE4353 (PNP) Silicon Complementary Transistors High Voltage Power Amplifier TO−3PN Type Package Description: The MJE4343 (NPN) and MJE4353 (PNP) are silicon complementary transistors in a TO−3PN type package designed for use in high power audio amplifier applications and high voltage switching regulator circuits. Features: D High Collector−Emitter Sustaining Voltage: VCEO(sus) = 160V D High DC Current Gain: hFE = 35 Typ @ IC = 8A D Low Collector−Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 8A Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .