| Part Number | MJE4343 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 160V(Min) ·DC current gain - : hFE = 15 (Min) @IC= 8 A : hFE = 8 (Min) @IC= 16A ·Complement to Type MJE4353 ·Minimum Lot-to-Lot variations for robus. nless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8A ;IB= 0.8A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 16A ;IB= 2A VBE(sat) Base-Emitter Saturation Voltage IC= . |
MJE4343 Datasheet and Specifications PDF
The MJE4343 is a Silicon NPN Power Transistor.
| Part Number | MJE4343 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | onsemi |
| Overview |
MJE4343 (NPN), MJE4353 (PNP)
High-Voltage - High Power Transistors
. . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits.
Features
• High Col.
* High Collector *Emitter Sustaining Voltage * NPN PNP VCEO(sus) = 160 Vdc * MJE4343 MJE4353 * High DC Current Gain * @ IC = 8.0 Adc hFE = 35 (Typ) * Low Collector *Emitter Saturation Voltage * VCE(sat) = 2.0 Vdc (Max) @ IC = 8.0 Adc * These are Pb *Free Devices MAXIMUM RATINGS Rating Symbol Max C. |
| Part Number | MJE4343 Datasheet |
|---|---|
| Description | 16 AMPERE POWER TRANSISTORS |
| Manufacturer | Motorola Semiconductor |
| Overview | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE4342/D High-Voltage Ċ High Power Transistors . . . designed for use in high power audio amplifier applications and high voltage switc. ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ. |
| Part Number | MJE4343 Datasheet |
|---|---|
| Description | (MJE4340 - MJE4343) SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-3PN package ·Respectively complement to type MJE4350/4351/4352/4353 ·DC current gain hFE=8(Min)@IC=16A APPLICATIONS ·For use in high power audio amplifier and switching re. stance junction to case MAX 1.0 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER MJE4340 MJE4341 IC=100mA ;IB=0 MJE4342 MJE4343 VCE(sat)-1 VCE(sat)-2 VBE(sat) VBE Collector-emitter saturation voltage Coll. |