Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 160V(Min)
DC current gain -
: hFE = 15 (Min) @IC= 8 A : hFE = 8 (Min) @IC= 16A
Complement to Type MJE4353
Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
For use in high power
Full PDF Text Transcription for MJE4343 (Reference)
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isc Silicon NPN Power Transistor MJE4343 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 160V(Min) ·DC current gain - : hFE = 15 (Min) @IC= 8 A : hFE = 8 ...
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US)= 160V(Min) ·DC current gain - : hFE = 15 (Min) @IC= 8 A : hFE = 8 (Min) @IC= 16A ·Complement to Type MJE4353 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For use in high power audio amplifier and switching regulator circuits ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 16 A IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 5 A 125 W -65~150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARA
MJE4343 Datasheet
