Datasheet Details
| Part number | MJE520 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.23 KB |
| Description | NPN Transistor |
| Datasheet | MJE520-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | MJE520 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.23 KB |
| Description | NPN Transistor |
| Datasheet | MJE520-INCHANGE.pdf |
|
|
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·High Collector Current-IC= 3.0A ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous 3 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 7 A 25 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ MJE520 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CBO Collector-Base Breakdown Voltage V(BR)CEO Collector-Emitter Breakdown Voltage V(BR)EBO Emitter-Base Breakdown Vltage VCE(sat) Collector-Emitter Saturation Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE-1 DC Current Gain fT Current-Gain—Bandwidth Product COB Output Capacitance CONDITIONS IC= 100μA ;
IE= 0 IC= 100mA IE= 100μA ;
IC= 0 IC= 500mA;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MJE520 | SILICON COMPLEMENTARY POWER TRANSISTORS | Central Corp |
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MJE520 | COMPLEMENTARY MEDIUM POWER TRANSISTOR | SGS-THOMSON |
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