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MJL21193 - PNP Transistor

General Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -250V(Min) High DC Current Gain hFE = 25 Min @ IC = 8 Adc Complement to Type MJL21194 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Perforated Emitter technology high powe

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isc Silicon PNP Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -250V(Min) High DC Current Gain – hFE = 25 Min @ IC = 8 Adc ·Complement to Type MJL21194 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Perforated Emitter technology high power audio output, disk head positioners linear applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -250 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -16 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -5 A 200 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ MJL21193 isc website：www.