Datasheet Details
| Part number | MJW16010A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.79 KB |
| Description | NPN Transistor |
| Download | MJW16010A Download (PDF) |
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| Part number | MJW16010A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.79 KB |
| Description | NPN Transistor |
| Download | MJW16010A Download (PDF) |
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|
|
·Low Collector Saturation Voltage ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 500V(Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage, high-speed,power switching in inductive circuits where fall time is critical.
They are particularly suited for line-operated switchmode applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-EmitterVoltage 1000 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 20 A IB Base Current 10 A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 15 A 135 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.92 ℃/W isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A;
isc Silicon NPN Power Transistor MJW16010A.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MJW16010A | POWER TRANSISTOR | Motorola |
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MJW16010A | NPN Silicon Power Transistors | ON Semiconductor |
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MJW16010 | 15 AMPERE NPN SILICON POWER TRANSISTORS | Motorola |
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MJW16010 | NPN SILICON POWER TRANSISTORS | ON |
 |
MJW16010 | SILICON POWER TRANSISTOR | SavantIC |
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