| Part Number | MJW16010A Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
ON Semiconductort
NPN Silicon Power Transistors
1 kV SWITCHMODEt Series
These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. .
* Collector *Emitter Voltage * VCEV = 1000 Vdc * Fast Turn *Off Times * 50 ns Inductive Fall Time * 100_C (Typ) * 90 ns Inductive Crossover Time * 100_C (Typ) * 900 ns Inductive Storage Time * 100_C (Typ) * 100_C Performance Specified for: Reverse *Biased SOA with Inductive Load Switching Times with I. |
MJW16010A Datasheet and Specifications PDF
The MJW16010A is a NPN Silicon Power Transistors.
| Part Number | MJW16010A Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Low Collector Saturation Voltage ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 500V(Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable . T 0.92 ℃/W isc Website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB=0 VCE(sat)-1 Collector-Emitte. |
| Part Number | MJW16010A Datasheet |
|---|---|
| Description | POWER TRANSISTOR |
| Manufacturer | Motorola Semiconductor |
| Overview |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Designer's
NPN Silicon Power Transistors
1 kV SWITCHMODE Series
These transistors are designed for high–voltage, high–speed.
* * * * * * Switching Regulators Inverters Solenoids Relay Drivers Motor Controls Deflection Circuits * Collector *Emitter Voltage * VCEV = 1000 Vdc * Fast Turn *Off Times 50 ns Inductive Fall Time * 100_C (Typ) 90 ns Inductive Crossover Time * 100_C (Typ) 900 ns Inductive Storage Time * 100_C (Typ) . |