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MJW16010A - NPN Transistor

General Description

Low Collector Saturation Voltage Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 500V(Min) Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage, high-speed,power switching i

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isc Silicon NPN Power Transistor MJW16010A DESCRIPTION ·Low Collector Saturation Voltage ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 500V(Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage, high-speed,power switching in inductive circuits where fall time is critical. They are particularly suited for line-operated switchmode applications.