MJW16010A Overview
NPN Silicon Power Transistors 1 kV SWITCHMODEt Series These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated SWITCHMODE applications. Typical Applications: Switching Regulators Inverters Solenoids Relay Drivers Motor Controls Deflection Circuits Features: Collector–Emitter Voltage VCEV = 1000 Vdc Fast Turn–Off Times 50 ns Inductive Fall Time 100_C (Typ) 90 ns Inductive Crossover Time 100_C (Typ) 900 ns Inductive Storage Time 100_C (Typ) 100_C Performance Specified for: Reverse–Biased SOA with Inductive Load Switching Times with Inductive Loads Saturation Voltages Leakage Currents Extended FBSOA Rating Using Ultra–fast Rectifiers Extremely High RBSOA Capability MJW16010A* *ON Semiconductor Preferred Device
MJW16010A Key Features
- Collector-Emitter Voltage - VCEV = 1000 Vdc - Fast Turn-Off Times - 50 ns Inductive Fall Time - 100_C (Typ) - 90 ns Indu
- Extended FBSOA Rating Using Ultra-fast Rectifiers - Extremely High RBSOA Capability
- ON Semiconductor Preferred Device
- Rev. 6
- 55 to 150
