MJW21196 Overview
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor MJW21196 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8.0A; IB= 0.8A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 16A;.
