MJW21196 Overview
MJW21195 (PNP) MJW21196 (NPN) Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.
MJW21196 Key Features
- Total Harmonic Distortion Characterized
- High DC Current Gain
- hFE = 20 Min @ IC = 8 Adc
- Excellent Gain Linearity
- High SOA: 2.25 A, 80 V, 1 Second
- Pb-Free Packages are Available
- 1.5 V Collector Current
- Continuous Collector Current
- Peak (Note 1)
- Continuous Total Power Dissipation @ TC = 25°C Derate Above 25°C
