MJW21196 - Silicon Power Transistors

Key Features

Total Harmonic Distortion Characterized.
High DC Current Gain.
hFE = 20 Min @ IC = 8 Adc.
Excellent Gain Linearity.
High SOA: 2.25 A, 80 V, 1 Second.
Pb.
Free Packages are Available.

MJW21196 silicon power transistors by ON - Datasheet Preview

Datasheet Details

Part number	MJW21196
Manufacturer	ON
File Size	157.67 KB
Description	Silicon Power Transistors
Datasheet	MJW21196 Datasheet

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Full PDF Text Transcription (Reference)

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MJW21195 (PNP) MJW21196 (NPN) Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features • Total Harmonic Distortion Characterized • High DC Current Gain − hFE = 20 Min @ IC = 8 Adc • Excellent Gain Linearity • High SOA: 2.25 A, 80 V, 1 Second • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector−Emitter Voltage − 1.5 V Collector Current − Continuous Collector Current − Peak (Note 1) Symbol VCEO VCBO VEBO VCEX IC Value 250 400 5.0 400 16 30 Unit Vdc Vdc Vdc Vdc Adc Base Current − Continuous Total Power Dissipation @ TC = 25°C Derate Above 25°C IB 5.