MJW21196 Datasheet and Specifications PDF

The MJW21196 is a Silicon Power Transistors.

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Part NumberMJW21196 Datasheet
Manufactureronsemi
Overview MJW21195 (PNP) MJW21196 (NPN) Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioner.
* Total Harmonic Distortion Characterized
* High DC Current Gain
* hFE = 20 Min @ IC = 8 Adc
* Excellent Gain Linearity
* High SOA: 2.25 A, 80 V, 1 Second
* Pb
*Free Packages are Available* MAXIMUM RATINGS Rating Collector
*Emitter Voltage Collector
*Base Voltage Emitter
*Base Voltage Collector
*Emitte.
Part NumberMJW21196 Datasheet
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·Total harmonic distortion characterized ·High DC current gain ·Excellent gain linearity ·High SOA ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·The. S V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8.0A; IB= 0.8A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 16A; IB= 3.2A VBE(on) Base-Emitter On Voltage IC=8A ; VCE= 5V ICEO Collector Cutoff Current VCE= 200V ; IE= .