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MJW21196 - NPN Transistor

General Description

Total harmonic distortion characterized High DC current gain Excellent gain linearity High SOA Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS The MJW21196 is specifically designed for high power audio output disk head pos

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isc Silicon NPN Power Transistor INCHANGE Semiconductor MJW21196 DESCRIPTION ·Total harmonic distortion characterized ·High DC current gain ·Excellent gain linearity ·High SOA ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·The MJW21196 is specifically designed for high power audio output disk head positioners and linear applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 16 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5.0 A 200 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.