MJW21195 Overview
MJW21195 (PNP) MJW21196 (NPN) Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. 1.43 W/°C Operating and Storage Junction Temperature Range TJ, Tstg − 65 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit
MJW21195 Key Features
- Total Harmonic Distortion Characterized - High DC Current Gain - hFE = 20 Min @ IC = 8 Adc - Excellent Gain Linearity -
- For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering
MJW21195 Applications
- Total Harmonic Distortion Characterized - High DC Current Gain - hFE = 20 Min @ IC = 8 Adc - Excellent Gain Linearity -
- For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering