900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






INCHANGE

MTP2N50 Datasheet Preview

MTP2N50 Datasheet

N-Channel MOSFET

No Preview Available !

Isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
MTP2N50
·FEATURES
·With low gate drive requirements
·Easy to drive
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
500
VGSS
Gate-Source Voltage
±20
ID
Drain Current-Continuous@TC=100
2
IDM
Drain Current-Single Pulsed
10
PD
Total Dissipation
75
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT
V
V
A
A
W
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX
1.36
62.5
UNIT
/W
/W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark




INCHANGE

MTP2N50 Datasheet Preview

MTP2N50 Datasheet

N-Channel MOSFET

No Preview Available !

Isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
MTP2N50
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
500
VGS(th)
Gate Threshold Voltage
VDS=±20V; ID=0.25mA
2.0
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=1.0A
IGSS
IDSS
VSDF
Gate-Source Leakage Current
Drain-Source Leakage Current
Diode forward voltage
VGS= ±20V;VDS= 0V
VDS= 500V; VGS= 0V;TJ=25
VDS= 400V; VGS= 0V;TJ=25
ISD=2.0A, VGS = 0 V
V
4.5
V
4.0
Ω
±0.1 μA
250
1000
μA
1.3
V
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark



Part Number MTP2N50
Description N-Channel MOSFET
Maker INCHANGE
Total Page 2 Pages
PDF Download

MTP2N50 Datasheet PDF





Similar Datasheet

1 MTP2N50 N-Channel MOSFET
Fairchild Semiconductor
2 MTP2N50 N-Channel MOSFET
INCHANGE
3 MTP2N50E Power MOSFET
Motorola
4 MTP2N55 Power Field Effect Transistor
Motorola





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy