Datasheet4U Logo Datasheet4U.com

MTP2N50E - Power MOSFET

Key Features

  • bbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 700 VDS = 0 V 600 Ciss C,.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MTP2N50 N-Channel Power MOSFET ART CHIP
MTP2N50 N-Channel MOSFET Fairchild Semiconductor
MTP2N50 N-Channel MOSFET INCHANGE
MTP2N35 N-Channel MOSFET ART CHIP
MTP2N40 (MTP2N35 / MTP2N40) N-Channel Power MOSFETs Fairchild Semiconductor

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MTP2N55 Power Field Effect Transistor
MTP2N20 POWER FIELD EFFECT TRANSISTOR
MTP2N40E TMOS POWER FET
MTP2N60 Power Field Effect Transistor
MTP2N60E TMOS POWER FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP2N50E/D Designer's TMOS E-FET .™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time.