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Ultrafast Rectifier
INCHANGE Semiconductor
MUR40120PT
FEATURES ·Guarding for over voltage protection ·Dual rectifier construction,positive center tap ·Metal of silicon rectifier,majority carrier conduction ·Low forward voltage,high efficiency ·100% tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching power supply ·Rectifier in switch mode supplies
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM VRWM
VR
IF(AV)
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
Average Rectified Forward Current
1200
V
40
A
Nonrepetitive Peak Surge Current
IFSM
(Surge applied at rated load conditions half-
180
A
wave, single phase, 60Hz)
TJ
Junction Temperature
-40~150 ℃
Tstg
S
MUR40120PT Datasheet
