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NJD35N04T4G - NPN Transistor

Description

With TO-252(DPAK) packaging Reliable performance at higher powers Designed for inductive loads Fast switching speed Very low current requirements Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Internal combustion en

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    isc Silicon NPN Power Transistor DESCRIPTION ·With TO-252(DPAK) packaging ·Reliable performance at higher powers ·Designed for inductive loads ·Fast switching speed ·Very low current requirements ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Internal combustion engine ignition control ·Switching regulators ·Motor controls ·Light ballast ·Photo flash ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Max.Collector Current-Continuous 8 A IB Base Current-Continuous PD Collector Power Dissipation @TC=25℃ TJ Junction Temperature 0.
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