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NJD35N04T4G Datasheet Preview

NJD35N04T4G Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
DESCRIPTION
·With TO-252(DPAK) packaging
·Reliable performance at higher powers
·Designed for inductive loads
·Fast switching speed
·Very low current requirements
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Internal combustion engine ignition control
·Switching regulators
·Motor controls
·Light ballast
·Photo flash
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
700
V
VCEO Collector-Emitter Voltage
350
V
VEBO Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
4
A
ICM
Max.Collector Current-Continuous
8
A
IB
Base Current-Continuous
PD
Collector Power Dissipation
@TC=25
TJ
Junction Temperature
0.5
A
45
W
150
Tstg
Storage Temperature Range
-65~150
NJD35N04T4G
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

NJD35N04T4G Datasheet Preview

NJD35N04T4G Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVCBO Collector-Base Breakdown Voltage IC=0.1mA; IE=0
BVCEO Collector-Emitter Breakdown Voltage IC=10mA; IB=0
BVEBO Emitter-Base Breakdown Voltage
IE=0.1mA;IC=0
VCE(sat) Collector-Emitter Saturation Voltage IC=2A; IB=20mA
VBE(sat) Collector-Emitter Saturation Voltage IC=2A; IB=20mA
VBE(on) Collector-Emitter On Voltage
IC=2A;VCE=2.0V
ICEO
Collector Cutoff Current
VCE= 300V; IB= 0
ICES
Collector Cutoff Current
VCB= 500V;IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
hFE-1
DC Current Cain
IC= 2A ; VCE= 2V
hFE-2
DC Current Cain
IC= 4A ; VCE= 2V
NJD35N04T4G
MIN TYP MAX UNIT
700
V
350
V
5
V
1.5
V
2.0
V
2.0
V
50 mA
50 mA
5
mA
2000
300
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number NJD35N04T4G
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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