NJD35N04G
NJD35N04G is NPN Power Transistor manufactured by onsemi.
Features
- Exceptional Safe Operating Area
- High VCE; High Current Gain
- NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC- Q101
Qualified and PPAP Capable
- These are Pb- Free Devices-
Benefits
- Reliable Performance at Higher Powers
- Designed for Inductive Loads
- Very Low Current Requirements
Applications
- Internal bustion Engine Ignition Control
- Switching Regulators
- Motor Controls
- Light Ballast
- Photo Flash
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector- Emitter Sustaining Voltage
Collector- Base Breakdown Voltage
Collector- Emitter Breakdown Voltage
Emitter- Base Voltage
Collector Current Continuous Peak
Base Current
Total Power Dissipation @ TC = 25C Derate above 25C
VCEO VCBO VCES VEBO
IC ICM IB PD
Vdc
Vdc
Vdc
Vdc
Adc 4.0...
