With TO-252(DPAK) packaging
Reliable performance at higher powers
Designed for inductive loads
Fast switching speed
Very low current requirements
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Internal combustion en
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc Silicon NPN Power Transistor
DESCRIPTION ·With TO-252(DPAK) packaging ·Reliable performance at higher powers ·Designed for inductive loads ·Fast switching speed ·Very low current requirements ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Internal combustion engine ignition control ·Switching regulators ·Motor controls ·Light ballast ·Photo flash
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
700
V
VCEO Collector-Emitter Voltage
350
V
VEBO Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
4
A
ICM
Max.Collector Current-Continuous
8
A
IB
Base Current-Continuous
PD
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
0.
NJD35N04T4G Datasheet
