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NTE2393 - N-Channel MOSFET

Key Features

  • With TO-3PN packaging.
  • High speed switching.
  • Standard level gate drive.
  • Easy to use.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor NTE2393 ·FEATURES ·With TO-3PN packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous @Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 9 5.