P50NF06 Overview
Description
Drain Current ID=50A@ TC=25℃ - Drain Source Voltage- : VDSS=60V(Min) - Static Drain-Source On-Resistance : RDS(on) = 28mΩ(Max) - Fast Switching Speed - Low Drive Requirement - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - High current , high speed switching - Switch mode power supplies - DC-DC converters for telecom, industrial,and lighting equipment ideal for monitor’s B+ function VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 60 V VGS Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 50 ID A Drain Current-continuous@ TC=100℃ 35 Ptot Total Dissipation@TC=25℃ 150 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-a P50NF06 isc website： 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor - SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 25A IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 60V; VGS= 0 VSD Diode Forward Voltage IF= 50A; VGS= 0 P50NF06 MIN MAX UNIT 60 V 2 4 V 0.028 Ω ±100 nA 10 uA 2.0 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
