Part number:
P5506BDA
Manufacturer:
INCHANGE
File Size:
236.78 KB
Description:
N-channel mosfet.
* Static drain-source on-resistance: RDS(on)≤55mΩ
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Vo
P5506BDA Datasheet (236.78 KB)
P5506BDA
INCHANGE
236.78 KB
N-channel mosfet.
📁 Related Datasheet
P5506BDA N-Channel Enhancement Mode Field Effect Transistor (NIKO-SEM)
P5506BDG N-Channel MOSFET (UNIKC)
P5506BDG N-Channel MOSFET (Niko)
P5506BVA N-Channel Enhancement Mode Field Effect Transistor (NIKO-SEM)
P5506BVG N-Channel MOSFET (UNIKC)
P5506BVG N-Channel Logic Level Enhancement Mode Field Effect Transistor (Niko)
P5506HPG Dual N-Channel MOSFET (NIKO-SEM)
P5506HVG Dual N-Channel Enhancement Mode Field Effect Transistor (Niko)
P5506NVG N&P-Channel MOSFET (UNIKC)
P5506NVG N- & P-Channel Enhancement Mode Field Effect Transistor (Niko)