P5506BDA Datasheet and Specifications PDF

NIKO-SEM N-Channel Enhancement Mode P5506BDA Field Effect Transistor TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 55mΩ ID 15A D G S ABSOLUTE MAXIMUM RATINGS (TA =.

Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0V, ID = 250A VDS = VGS, ID = 250A 60 V 1.3 1.75 2.3 VDS = 0V, VGS = ±20V ±100 nA VDS = 48V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 125 °C 1 A 10 REV1.0 1 H-24-5 NIKO-SEM N-Cha.

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤55mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation .

*Static drain-source on-resistance: RDS(on)≤55mΩ
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Switching applications
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Sou.