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P5506BVA - N-Channel Enhancement Mode Field Effect Transistor

Download the P5506BVA datasheet PDF. This datasheet also covers the P5506BVA-NIKO variant, as both devices belong to the same n-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (P5506BVA-NIKO-SEM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number P5506BVA
Manufacturer NIKO-SEM
File Size 240.03 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet P5506BVA Datasheet

📁 Similar Datasheet

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Other Datasheets by NIKO-SEM

Part Number Description
P5506BDA N-Channel Enhancement Mode Field Effect Transistor
P5506HPG Dual N-Channel MOSFET
P5504EDG P-Channel Logic Level Enhancement
P5515BD N-Channel Enhancement Mode Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NIKO-SEM N-Channel Enhancement Mode P5506BVA Field Effect Transistor SOP-8 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 55mΩ ID 4.5A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy Power Dissipation3 Junction & Storage Temperature Range TA = 25 °C TA = 70 °C L = 0.1mH TA = 25 °C TA = 70 °C VDS VGS ID IDM IAS EAS PD TJ, Tstg G: GATE D: DRAIN S: SOURCE LIMITS 60 ±20 4.5 3.6 16 14 9.8 2.5 1.