P5506BVA Overview
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3The Power dissipation is based on RJA t ≦10s value.
P5506BVA datasheet by NIKO-SEM.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | P5506BVA |
|---|---|
| Datasheet | P5506BVA P5506BVA-NIKO Datasheet (PDF) |
| File Size | 240.03 KB |
| Manufacturer | NIKO-SEM |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
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2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3The Power dissipation is based on RJA t ≦10s value.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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P5506BVG | N-Channel MOSFET | UNIKC |
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P5506BVG | N-Channel Logic Level Enhancement Mode Field Effect Transistor | Niko |
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P5506BDA | N-Channel MOSFET | INCHANGE |
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P5506BDG | N-Channel MOSFET | UNIKC |
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P5506BDG | N-Channel MOSFET | Niko |
| Part Number | Description |
|---|---|
| P5506BDA | N-Channel Enhancement Mode Field Effect Transistor |
| P5506HPG | Dual N-Channel MOSFET |
| P5504EDG | P-Channel Logic Level Enhancement |
| P5515BD | N-Channel Enhancement Mode Field Effect Transistor |