P5506BVA Description
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3The Power dissipation is based on RJA t ≦10s value.
P5506BVA is N-Channel Enhancement Mode Field Effect Transistor manufactured by NIKO-SEM.
| Manufacturer | Part Number | Description |
|---|---|---|
UNIKC |
P5506BVG | N-Channel MOSFET |
Niko |
P5506BVG | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
Inchange Semiconductor |
P5506BDA | N-Channel MOSFET |
UNIKC |
P5506BDG | N-Channel MOSFET |
Niko |
P5506BDG | N-Channel MOSFET |
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3The Power dissipation is based on RJA t ≦10s value.