P5506BDA Overview
Key Features
- Static drain-source on-resistance: RDS(on)≤55mΩ
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- Switching applications
| Part | P5506BDA |
|---|---|
| Description | N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Inchange Semiconductor |
| Size | 236.78 KB |
Similar Parts
| Part Number | Manufacturer | Description |
|---|---|---|
| P5506BDA | NIKO-SEM | N-Channel Enhancement Mode Field Effect Transistor |
| P5506BDG | Niko | N-Channel MOSFET |
| P5506BDG | UNIKC | N-Channel MOSFET |
| P5506BVA | NIKO-SEM | N-Channel Enhancement Mode Field Effect Transistor |
| P5506BVG | UNIKC | N-Channel MOSFET |