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P5506BVG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 55mΩ @VGS =10V
ID 5.5A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain Current1
Tc = 25 °C Tc = 70 °C
ID
5.5 4.5
Pulsed Drain Current
IDM 20
Power Dissipation2
Tc = 25 °C Tc = 70 °C
PD
2.5 1.3
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Duty cycle 1%
SYMBOL RqJC RqJA
TYPICAL 17 37
MAXIMUM 25 50
UNITS °C / W
Ver 1.
P5506BVG Datasheet
