P5506BVG Datasheet
P5506BVG Datasheet (UNIKC)
UNIKC
P5506BVG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 55mΩ @VGS =10V ID 5.5A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST COND.
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P5506BVG Datasheet (Niko)
Niko
NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P5506BVG SOP-8 Lead-Free PRODUCT SUMMARY V(BR)DSS 60 RDS(ON) 55m ID 5.5A D 4 :GATE 5,6,7,8 :DRAIN 1,2,3 .
= 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 48V, VGS = 0V Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source Resistance1 On-State IDSS ID(ON) VDS = 40V, VGS = 0V, TJ = 55 °C VDS = 5V, VGS = 10V VGS = 4.5V, ID = 4.5A RDS(ON) gfs VGS = 10V, ID = 5.5A VDS = 10V, ID = 5.5.