P5506BDA - N-Channel Enhancement Mode Field Effect Transistor

NIKO-SEM

Download the P5506BDA datasheet PDF. This datasheet also covers the P5506BDA-NIKO variant, as both devices belong to the same n-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

📥 Download Datasheet

P5506BDA n-channel enhancement mode field effect transistor by NIKO-SEM - Datasheet Preview — Note: The manufacturer provides a single datasheet file (P5506BDA-NIKO-SEM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	P5506BDA
Manufacturer	NIKO-SEM
File Size	215.00 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	P5506BDA Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
P5506BDA	N-Channel MOSFET	INCHANGE
P5506BDG	N-Channel MOSFET	UNIKC
P5506BDG	N-Channel MOSFET	Niko
P5506BVG	N-Channel MOSFET	UNIKC
P5506BVG	N-Channel Logic Level Enhancement Mode Field Effect Transistor	Niko

Other Datasheets by NIKO-SEM

Part Number	Description
P5506BVA	N-Channel Enhancement Mode Field Effect Transistor
P5506HPG	Dual N-Channel MOSFET
P5504EDG	P-Channel Logic Level Enhancement
P5515BD	N-Channel Enhancement Mode Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

NIKO-SEM N-Channel Enhancement Mode P5506BDA Field Effect Transistor TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 55mΩ ID 15A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy Power Dissipation Junction & Storage Temperature Range TC = 25 °C TC = 100 °C L = 0.1mH TC = 25 °C TC = 100 °C VDS VGS ID IDM IAS EAS PD TJ, Tstg 1. GATE 2. DRAIN 3. SOURCE LIMITS 60 ±20 15 9.5 30 14.7 10.8 27 11 -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Case RJC Junction-to-Ambient RJA 1Pulse width limited by maximum junction temperature.