Datasheet4U Logo Datasheet4U.com

R6007JND3 - N-Channel MOSFET

General Description

purpose applications.

Key Features

  • Drain Current.
  • ID=7A@ TC=25℃.
  • Drain Source Voltage- : VDSS=600V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 780mΩ(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
R6007JND3 Power MOSFET ROHM
R6007JNJ Power MOSFET ROHM
R6007JNX Power MOSFET ROHM
R6007ENJ Power MOSFET ROHM
R6007ENX Power MOSFET ROHM

Other Datasheets by Inchange Semiconductor

Part Number Description
R6007JNJ N-Channel MOSFET
R6007JNX N-Channel MOSFET
R6007ENJ N-Channel MOSFET
R6007ENX N-Channel MOSFET
R6007KNJ N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor R6007JND3 FEATURES ·Drain Current –ID=7A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 780mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 7 A IDM Drain Current-Single Pluse 21 A PD Total Dissipation @TC=25℃ 96 W TJ Max.