Datasheet Details
| Part number | RFP70N06 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 226.16 KB |
| Description | N-Channel MOSFET |
| Download | RFP70N06 Download (PDF) |
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Overview: isc N-Channel MOSFET Transistor INCHANGE Semiconductor RFP70N06.
| Part number | RFP70N06 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 226.16 KB |
| Description | N-Channel MOSFET |
| Download | RFP70N06 Download (PDF) |
|
|
|
·Drain Current ID=70A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 14mΩ(Max) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for use in applications such as swithing Regulators,switching convertes, motor drivers and Relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS VGS ID PD Drain-Source Voltage (VGS=0) Gate-Source Voltage Drain Current-continuous@ TC=25℃ Power Dissipation @TC=25℃ Tj Max.
Operating Junction Temperature Tstg Storage Temperature Range VALUE UNIT 60 V ±20 V 70 A 150 W -55~175 ℃ -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor INCHANGE Semiconductor RFP70N06 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
Compare RFP70N06 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
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