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RFP70N06 - N-Channel Power MOSFET

Key Features

  • 70A, 60V.
  • rDS(on) = 0.014Ω.
  • Temperature Compensated PSPICE® Model.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve (Single Pulse).
  • 175oC Operating Temperature.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packaging JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE ©2005 Fairchild Semiconductor Corporation RFP70N06 Rev. D1 RFP70N06 Absolute Maximum Ratings TC =.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet September 2013 RFP70N06 N-Channel Power MOSFET 60V, 70A, 14 mΩ These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA78440. Ordering Information PART NUMBER RFP70N06 PACKAGE TO-220AB BRAND RFP70N06 NOTE: When ordering use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, e.g. RF1S70N06SM9A. Features • 70A, 60V • rDS(on) = 0.