Download RFP70N06 Datasheet PDF
Inchange Semiconductor
RFP70N06
DESCRIPTION - Drain Current ID=70A@ TC=25℃ - Drain Source Voltage- : VDSS=60V(Min) - Static Drain-Source On-Resistance : RDS(on) = 14mΩ(Max) - Fast Switching Speed - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for use in applications such as swithing Regulators,switching convertes, motor drivers and Relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS VGS ID PD Drain-Source Voltage (VGS=0) Gate-Source Voltage Drain Current-continuous@ TC=25℃ Power Dissipation @TC=25℃ Tj Max. Operating Junction Temperature Tstg Storage Temperature Range VALUE UNIT ±20 -55~175 ℃ -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website:.iscsemi. 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor INCHANGE Semiconductor - ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(...