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RU75230S - N-Channel MOSFET

Features

  • With To-263(D2PAK) package.
  • Ultra low on-resistance.
  • Fast Switching Speed.
  • High power and current handling capability.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription

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Isc N-Channel MOSFET Transistor ·FEATURES ·With To-263(D2PAK) package ·Ultra low on-resistance ·Fast Switching Speed ·High power and current handling capability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·High current switching applications ·DC-DC convertors INCHANGE Semiconductor RU75230S ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 75 VGSS ID IDM PD Tch Gate-Source Voltage Drain Current-Continuous@TC=25℃ (VGS=10V) TC=125℃ Drain Current-Single Pulsed Total Dissipation @TC=25℃ TC=125℃ Max.
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