Datasheet Details
| Part number | S9013 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.75 KB |
| Description | NPN Transistor |
| Download | S9013 Download (PDF) |
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| Part number | S9013 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.75 KB |
| Description | NPN Transistor |
| Download | S9013 Download (PDF) |
|
|
|
·Excellent hFE linearity ·Complement to PNP Type S9012 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range S9013 VALUE 40 25 5 500 625 150 -55~150 UNIT V V V mA mW ℃ ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor S9013 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO V(BR)CEO V(BR)EBO Collector-base breakdown voltage IC= 100μA , IE=0 Collector-Emitter Voltage Breakdown IC= 1mA ;
IB= 0 Emitter-base breakdown voltage IE= 100μA , IC=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA;
IB= 50mA VBE(sat) Base-Emitter Saturation Voltage IC= 500mA;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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S9013 | NPN Transistor | SeCoS |
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S9013 | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
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S9013 | NPN Silicon Transistors | MCC |
| Part Number | Description |
|---|---|
| S9012 | PNP Transistor |