| Part Number | S9013 |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview | SS9013 SS9013 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • • • • High total power dissipation. (PT=625mW) High Collector Current. (IC=500mA) Complementary to SS9012 Excelle. itter On Voltage Test Condition IC =100µA, IE =0 IC =1mA, IB =0 IE =100µA, IC =0 VCB =25V, IE =0 VEB =3V, IC =0 VCE =1V, IC =50mA VCE =1V, IC =500mA IC =500mA, IB =50mA IC =500mA, IB =50mA VCE =1V, IC =10mA 0.6 64 40 120 120 0.16 0.91 0.67 Min. 40 20 5 100 100 202 0.6 1.2 0.7 V V V Typ. Max. Units V. |
S9013 Datasheet
The S9013 is a NPN Epitaxial Silicon Transistor.
| Part Number | S9013 |
|---|---|
| Description | NPN Silicon Transistor |
| Manufacturer | Kodenshi AUK Group |
| Overview |
• General purpose application. • Switching application.
Features
• Excellent hFE linearity. • Complementary pair with STS9012
Ordering Information
Type NO. STS9013 Marking STS9013 Package Code TO-9.
* Excellent hFE linearity. * Complementary pair with STS9012 Ordering Information Type NO. STS9013 Marking STS9013 Package Code TO-92 Outline Dimensions 3.45±0.1 4.5±0.1 2.25±0.1 unit : mm 4.5±0.1 0.4±0.02 2.06±0.1 14.0±0.40 1.27 Typ. 2.54 Typ. 1 2 3 1.20±0.1 PIN Connections 1. Emitter 2.. |
| Part Number | S9013 |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Excellent hFE linearity ·Complement to PNP Type S9012 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM . age IC= 500mA; IB= 50mA VBE(sat) Base-Emitter Saturation Voltage IC= 500mA; IB= 50mA ICBO Collector Cutoff Current VCB= 40V ; IE= 0 ICEO Collector cut-off current VCE=20V , IE=0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 50mA ; VCE= 1V hFE-2 DC Current Gain . |
| Part Number | S9013 |
|---|---|
| Description | NPN Silicon Transistors |
| Manufacturer | Micro Commercial Components |
| Overview |
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Features
• TO-92 Plastic-Encapsulate Transistors • Capable of 0.625Watts(Tamb=.
* TO-92 Plastic-Encapsulate Transistors * Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. * Collector-current 0.5A * Collector-base Voltage 40V * Operating and storage junction temperature range: -55OC to +150OC * Marking Code: S9013 Pin Configuration C BE Electrical Characteristics @ 25OC U. |